Electrical neuromodulation has shown superior therapeutic outcomes compared with pharmacological interventions alone. This work introduces a 16-channel neurostimulation IC featuring transistor-stacked monopolar stimulation drivers in standard CMOS technology. With a self-adaptive biasing scheme, the stimulation driver ensures operational safety across all load conditions under the ±6-V voltage compliance and successfully addresses potential leakage issues in prior work. Each driver features 8-bit current control with 1 μA resolution. An on-chip charge-pump system generates ±6-V supplies using a novel multiple-output pulse-skipping modulation scheme and achieves a remarkable power density of 25.44 mW/mm² through the systematic optimization of sub-converters. The 16-channel neurostimulation IC is fabricated in a 180-nm standard CMOS technology, occupying a total pad-included area of 3 mm2. The compactness and process compatibility of the design demonstrate the potential for enabling next-generation high-channel-count neural interfaces.
电刺激神经调控相比单纯药物干预展现出更优越的治疗效果。本研究提出了一种基于标准CMOS工艺的16通道神经刺激集成电路（IC），该电路采用晶体管堆叠的单极刺激驱动器。通过自适应偏置方案，刺激驱动器在±6伏电压范围内可在各种负载条件下安全运行，并成功解决了以往设计中存在的泄漏问题。每个驱动器支持8位电流控制，电流分辨率为1微安。芯片内置的电荷泵系统采用一种新颖的多输出脉冲跳跃调制方案生成±6伏供电电压，并通过对子转换器的系统优化，实现了高达25.44 mW/mm²的功率密度。该16通道神经刺激IC采用180纳米标准CMOS工艺制造，总面积（含焊盘）为3 mm²。该设计的紧凑性和工艺兼容性展示了其在下一代高通道数神经接口中的应用潜力。
